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Source: Nanotechnology. 2025. Vol. 36, № 13. P. 135201 (1-10)
Type: статьи в журналах
Date: 2025
Description:
Structural and photoelectric properties of p–i–n photodiodes based on GeSiSn/Si multiple quantum dots (QDs) both on Si and silicon-on-insulator substrates were investigated. Elastic strained state of
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Authors:
Abramkin, Demid S. |
Petrushkov, Mikhail O. |
Bogomolov, Dmitrii B. |
Emelyanov, Eugeny A. |
Yesin, Michail Yu. |
Vasev, Andrey V. |
Bloshkin, Aleksei A. |
Koptev, Eugeny S. |
Putyato, Mikhail A. |
Atuchin, Victor V. |
Preobrazhenskii, Valery V.
Source: Nanomaterials. 2023. Vol. 13, № 5. P. 910 (1-20)
Type: статьи в журналах
Date: 2023
Description:
In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs’
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Source: Current applied physics. 2020. Vol. 20, № 7. P. 877-882
Type: статьи в журналах
Date: 2020
Description:
The paper is devoted to optical testing of mid-infrared Ge/Si photodetectors obtained by stacking of self-assembled
Source: Journal of physics D: Applied physics. 2020. Vol. 53, № 33. P. 335105 (1-7)
Type: статьи в журналах
Date: 2020
Description:
Surface plasmon waves and Rayleigh anomaly are characteristic optical phenomena exhibited
Source: Photonics and nanostructures - Fundamentals and applications. 2020. Vol. 40. P. 100790 (1-6]
Type: статьи в журналах
Date: 2020
Description:
We performed numerical simulations of plasmonic near-field enhancement in Si-based structures in near infrared
Source: Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8)
Type: статьи в журналах
Date: 2018
Description:
The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the
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